MBT35200MT1 datasheet(4/5 Pages) ONSEMI

No de pièce	MBT35200MT1

Description	High Current Surface Mount PNP Silicon

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Fabricant	ONSEMI [ON Semiconductor]

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MBT35200MT1

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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

0.01

0.1

1.0

10

100

0.1

1.0

100

ms

1 ms

10 ms

100 ms

1 s

DC

SINGLE PULSE AT Tamb = 25°C

Figure 7. Output Capacitance

VCB, COLLECTOR BASE VOLTAGE (VOLTS)

0

225

125

100

75

25

0

15

5.0

10

50

200

175

150

30

20

25

35

Figure 8. Safe Operating Area

0.1

Figure 9. Normalized Thermal Response

t, TIME (sec)

1.0

0.001

0.01

0.00001

0.01

0.1

1.0

100

1000

0.1

0.0001

0.001

10

D = 0.5

0.02

0.05

0.2

0.01

SINGLE PULSE

Numéro de pièce similaire - MBT35200MT1

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	MBT35200MT1	81Kb / 8P	High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications August, 2000 ??Rev. 1
	MBT35200MT1	64Kb / 6P	High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications June, 2005 ??Rev. 2
	MBT35200MT1	115Kb / 5P	High Current Surface Mount PNP Silicon Switching Transistor August, 2013 ??Rev. 5
	MBT35200MT1G	64Kb / 6P	High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications June, 2005 ??Rev. 2
	MBT35200MT1G	115Kb / 5P	High Current Surface Mount PNP Silicon Switching Transistor August, 2013 ??Rev. 5

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Description similaire - MBT35200MT1

Fabricant	No de pièce	Fiches technique	Description
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MBT35200MT1 Fiches technique(PDF) 4 Page - ON Semiconductor

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