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CSD25483F4 Fiches technique(PDF) 1 Page - Texas Instruments

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No de pièce CSD25483F4
Description  20 V, P-Channel FemtoFE MOSFET
Download  12 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

CSD25483F4 Fiches technique(HTML) 1 Page - Texas Instruments

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D
G
S
0.35
mm
CSD25483F4
SLPS449B – OCTOBER 2013 – REVISED FEBRUARY 2014
CSD25483F4, 20 V P-Channel FemtoFET™ MOSFET
.
1 Features
Product Summary
1
Ultra-Low On Resistance
VDS
Drain-to-Source Voltage
–20
V
Ultra-Low Qg and Qgd
Qg
Gate Charge Total (–4.5 V)
959
pC
High Operating Drain Current
Qgd
Gate Charge Gate to Drain
161
pC
VGS = –1.8 V
530
m
Ultra-Small Footprint (0402 Case Size)
RDS(on)
Drain-to-Source On Resistance
VGS = –2.5 V
338
m
1.0 mm × 0.6 mm
VGS = –4.5 V
210
m
Ultra-Low Profile
VGS(th)
Threshold Voltage
–0.95
V
0.35 mm Max Height
Integrated ESD Protection Diode
.
Ordering Information
Rated > 4 kV HBM
Device
Qty
Media
Package
Ship
Rated > 2 kV CDM
CSD25483F4
3000
Femto (0402)
7-Inch
Tape and
Lead and Halogen Free
1.0 mm x 0.6 mm
Reel
Reel
CSD25483F4T
250
Land Grid Array (LGA)
RoHS Compliant
.
2 Applications
Absolute Maximum Ratings
Optimized for Load Switch Applications
TA = 25°C
VALUE
UNIT
Optimized for General Purpose Switching
VDS
Drain-to-Source Voltage
–20
V
Applications
VGS
Gate-to-Source Voltage
–12
V
Battery Applications
ID
Continuous Drain Current(1)
–1.6
A
IDM
Pulsed Drain Current(2)
–6.5
A
Handheld and Mobile Applications
Continuous Gate Clamp Current
–35
IG
mA
Pulsed Gate Clamp Current(2)
–350
3 Description
PD
Power Dissipation(1)
500
mW
This 210 m
Ω, 20 V P-Channel FemtoFET™ MOSFET
Human Body Model (HBM)
4
kV
is designed and optimized to minimize the footprint in
ESD
Rating
many
handheld
and
mobile
applications.
This
Charged Device Model (CDM)
2
kV
technology is capable of replacing standard small
TJ,
Operating Junction and
–55 to 150
°C
TSTG
Storage Temperature Range
signal MOSFETs while providing at least a 60%
reduction in footprint size.
(1) Typical RθJA = 85°C/W on 1-inch
2 (6.45-cm2), 2-oz. (0.071-
mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
.
(2) Pulse duration
≤ 300 μs, duty cycle ≤ 2%
Typical Part Dimensions
Top View
.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


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