2N4920 datasheet(5/6 Pages) ONSEMI

No de pièce	2N4920

Description	Medium-Power Plastic PNP Silicon Transistors

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2N4918 − 2N4920* Series

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TYPICAL DC CHARACTERISTICS

−0.2

1000

2.0

Figure 8. Current Gain

IC, COLLECTOR CURRENT (mA)

10

3.0 5.0

10

20 30

200 300 500

2000

500

200

100

70

Figure 9. Collector Saturation Region

1.0

0.2

IB, BASE CURRENT (mA)

0

0.3 0.5

1.0

2.0

5.0

10

20

50

200

0.8

0.6

0.4

0.2

IC = 0.1 A

TJ = 25°C

0.25 A

0.5 A

1.0 A

700

300

TJ = 150°C

25°C

−55 °C

VCE = 1.0 V

50

30

20

50

100

1000

3.0

30

100

108

0

Figure 10. Effects of Base−Emitter Resistance

TJ, JUNCTION TEMPERATURE (°C)

30

60

90

120

150

107

105

104

103

VCE = 30 V

IC = 10 ICES

IC = 2x ICES

IC ≈ ICES

ICES VALUES

OBTAINED FROM

FIGURE 13

106

1.5

2.0

IC, COLLECTOR CURRENT (mA)

5.0

10

20 30 50

100 200 300

2000

1.2

0.9

0.6

0.3

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

Figure 11. “On” Voltage

3.0

500 1000

VBE @ VCE = 2.0 V

102

Figure 12. Collector Cut−Off Region

VBE, BASE−EMITTER VOLTAGE (VOLTS)

101

100

10−1

10− 2

103

−0.1

0

+0.1

+0.2

+0.3

+0.4

+0.5

VCE = 30 V

TJ = 150°C

100°C

25°C

FORWARD

IC = ICES

104

+2.5

2.0

Figure 13. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

3.0 5.0

10

20 30

50

100 200

2000

TJ = −55°C to +100°C

+2.0

+1.5

+0.5

0

−0.5

−1.0

−1.5

−2.0

−2.5

qVB FOR VBE

*qVC FOR VCE(sat)

TJ = 100°C to 150°C

*APPLIES FOR IC/IB <

hFE @VCE + 1.0V

2

+1.0

300 500 1000

REVERSE

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