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2SK209-Y Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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2SK209-Y Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SK209 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA (max) at VGS = −30 V • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS −50 V Gate current IG 10 mA Drain power dissipation PD 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current IGSS VGS = −30 V, VDS = 0 ⎯ ⎯ −1.0 nA Gate-drain breakdown voltage V (BR) GDS VDS = 0, IG = −100 μA −50 ⎯ ⎯ V Drain current IDSS (Note) VDS = 10 V, VGS = 0 1.2 ⎯ 14.0 mA Gate-source cut-off voltage VGS (OFF) VDS = 10 V, ID = 0.1 μA −0.2 ⎯ −1.5 V Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, VGS = 0, f = 1 kHz 4.0 15 ⎯ mS Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 13 ⎯ pF Reverse transfer capacitance Crss VDG = 10 V, ID = 0, f = 1 MHz ⎯ 3 ⎯ pF Noise figure NF (1) VDS = 10 V, RG = 1 kΩ ID = 0.5 mA, f = 10 Hz ⎯ 5 ⎯ dB Noise figure NF (2) VDS = 10 V, RG = 1 kΩ ID = 0.5 mA, f = 1 kHz ⎯ 1 ⎯ dB Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA Unit: mm JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1B Weight: 0.012 g (typ.) |
Numéro de pièce similaire - 2SK209-Y |
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Description similaire - 2SK209-Y |
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