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BAV23S Fiches technique(PDF) 4 Page - NXP Semiconductors

No de pièce BAV23S
Description  Dual high-voltage switching diodes
Download  13 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAV23S Fiches technique(HTML) 4 Page - NXP Semiconductors

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BAV23_SER_7
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
4 of 13
NXP Semiconductors
BAV23 series
Dual high-voltage switching diodes
[1]
Single diode loaded.
[2]
Double diode loaded.
[3]
Tj =25 C prior to surge.
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7.
Characteristics
[1]
When switched from IF = 10 mA to IR =10mA; RL = 100 ; measured at IR =1mA.
Per device
Ptot
total power dissipation
Tamb  25 C
[4] -250
mW
Tj
junction temperature
-
150
C
Tamb
ambient temperature
65
+150
C
Tstg
storage temperature
65
+150
C
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1] -
-
500
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
360
K/W
Table 8.
Characteristics
Tamb =25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
IF = 100 mA
--1.0
V
IF = 200 mA
--1.25
V
IR
reverse current
VR = 200 V
-
-
100
nA
VR =200 V; Tj = 150 C
-
-
100
A
Cd
diode capacitance
f = 1 MHz; VR = 0 V
--2
pF
trr
reverse recovery time
[1] --50
ns


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