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BAV23S Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BAV23S Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 13 page BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 4 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes [1] Single diode loaded. [2] Double diode loaded. [3] Tj =25 C prior to surge. [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics [1] When switched from IF = 10 mA to IR =10mA; RL = 100 ; measured at IR =1mA. Per device Ptot total power dissipation Tamb 25 C [4] -250 mW Tj junction temperature - 150 C Tamb ambient temperature 65 +150 C Tstg storage temperature 65 +150 C Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 500 K/W Rth(j-sp) thermal resistance from junction to solder point - - 360 K/W Table 8. Characteristics Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage IF = 100 mA --1.0 V IF = 200 mA --1.25 V IR reverse current VR = 200 V - - 100 nA VR =200 V; Tj = 150 C - - 100 A Cd diode capacitance f = 1 MHz; VR = 0 V --2 pF trr reverse recovery time [1] --50 ns |
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