BAV23_SER_7

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Product data sheet

Rev. 07 — 19 March 2010

4 of 13

NXP Semiconductors

BAV23 series

Dual high-voltage switching diodes

[1]

Single diode loaded.

[2]

Double diode loaded.

[3]

[4]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

[1]

Per device

total power dissipation

[4] -250

mW

junction temperature

-

150

C

ambient temperature

65

+150

C

storage temperature

65

+150

C

Table 6.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

thermal resistance from

junction to ambient

in free air

[1] -

-

500

K/W

thermal resistance from

junction to solder point

-

-

360

K/W

Table 8.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

forward voltage

--1.0

V

--1.25

V

reverse current

-

-

100

nA

-

-

100

A

diode capacitance

--2

pF

reverse recovery time

[1] --50

ns