BAV23S-215 datasheet(5/13 Pages) NXP

No de pièce	BAV23S-215

Description	Dual high-voltage switching diodes

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BAV23_SER_7

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Product data sheet

Rev. 07 — 19 March 2010

5 of 13

NXP Semiconductors

BAV23 series

Dual high-voltage switching diodes

(1) Tamb = 150 C

(2) Tamb =85 C

(3) Tamb =25 C

(4) Tamb = 40 C

Based on square wave currents.

Tj =25 C; prior to surge

Fig 1.

Forward current as a function of forward

voltage; typical values

Fig 2.

Non-repetitive peak forward current as a

function of pulse duration; maximum values

(1) Tamb = 150 C

(2) Tamb =85 C

(3) Tamb =25 C

(4) Tamb = 40 C

Fig 3.

Reverse current as a function of reverse voltage; typical values

VF (V)

0

1.6

1.2

0.4

0.8

006aab212

200

400

600

IF

(mA)

0

(1)

(3)

(4)

(2)

mbg703

10

1

102

IFSM

(A)

10−1

tp (μs)

1104

103

10

102

006aab213

102

IR

(

μA)

VR (V)

0

250

200

100

150

50

10

1

10−1

10−2

10−3

10−4

10−5

(4)

(1)

(2)

(3)

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