SI4804CDY-T1-GE3 datasheet(1/7 Pages) VISHAY

No de pièce	SI4804CDY-T1-GE3

Description	Dual N-Channel 30-V (D-S) MOSFET

Download	7 Pages

Scroll/Zoom	100%

Fabricant	VISHAY [Vishay Siliconix]

Site Internet	http://www.vishay.com

Logo

1 / 7 page

Vishay Siliconix

Si4804CDY

New Product

Document Number: 68924

S-82485-Rev. A, 13-Oct-08

www.vishay.com

1

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free

•TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

APPLICATIONS

•

DC/DC

•

Notebook System Power

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 120 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

30

0.022 at VGS = 10 V

8

7

0.027 at VGS = 4.5 V

7.9

S1

G1

D2

D1

S2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4804CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

8.0

A

TC = 70 °C

7.1

TA = 25 °C

7.1b, c

TA = 70 °C

5.5b, c

Pulsed Drain Current (10 µs Pulse Width)

IDM

30

Source-Drain Current Diode Current

TC = 25 °C

IS

2.4

TA = 25 °C

1.8b, c

Pulsed Source-Drain Current

ISM

30

Single Pulse Avalanche Current

L = 0.1 mH

IAS

10

Single Pulse Avalanche Energy

EAS

5

mJ

Maximum Power Dissipation

TC = 25 °C

PD

3.1

W

TC = 70 °C

2

TA = 25 °C

2b, c

TA = 70 °C

1.28b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

49

62.5

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

32

40

RoHS

COMPLIANT

Numéro de pièce similaire - SI4804CDY-T1-GE3

Fabricant	No de pièce	Fiches technique	Description
Analog Devices	Si4804CDY	853Kb / 32P	Dual 5 A, 20 V Synchronous Step-Down REV. 0
Analog Devices	Si4804CDY	2Mb / 32P	Dual 3 A, 20 V Synchronous Step-Down Regulator with Integrated High-Side MOSFET REV. A

More results

Description similaire - SI4804CDY-T1-GE3

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI7212DN	94Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Jun-05
DinTek Semiconductor Co...	DTM4936	294Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4932DY	111Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 22-Dec-08
Vishay Siliconix	SIZ340DT	372Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 24-Mar-14
Analog Power	AM6926NH	398Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4276DY-T1-E3	232Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 11-Apr-11
	SI4276DY	304Kb / 15P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 31-May-10
	SI5906DU	164Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 20-Jul-09
	SI7212DN	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09
Analog Power	AM4934N	95Kb / 3P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4936ADY	61Kb / 4P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Oct-03

More results

SI4804CDY-T1-GE3 Fiches technique(PDF) 1 Page - Vishay Siliconix

SI4804CDY-T1-GE3 Fiches technique(HTML) 1 Page - Vishay Siliconix

Numéro de pièce similaire - SI4804CDY-T1-GE3

Description similaire - SI4804CDY-T1-GE3

Html Pages

1 2 3 4 5 6 7

Fiches technique Télécharger

Lien URL