2SA1020 datasheet(4/5 Pages) TOSHIBA

No de pièce	2SA1020

Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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2SA1020

2010-11-09

4

Base-emitter voltage VBE (V)

IC – VBE

Ambient temperature Ta (°C)

PC – Ta

Collector-emitter voltage VCE (V)

Safe Operating Area

0

Common emitter

VCE = −2 V

25

−55

Ta

= 100°C

−2.0

−0.4

−0.8

−1.2

−1.6

−2.0

−0.5

−1.0

−1.5

0

40

80

120

160

200

240

200

400

1000

600

800

*: Single nonrepetitive pulse

Ta

= 25°C

Curves must be derated linearly

with increase in temperature.

−0.01

−0.1

−5

IC max (pulsed)*

VCEO max

1 ms*

10 ms*

100 ms*

DC operation

Ta

= 25°C

−30

−100

−5

−10

−1

−3

−0.03

−0.05

−0.1

−0.3

−0.5

−1

−3

−50

1 s*

−0.5

−0.3

IC max (continuous)

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