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DSEC29-06AC Fiches technique(PDF) 5 Page - IXYS Corporation

No de pièce DSEC29-06AC
Description  High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode
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Fabricant  IXYS [IXYS Corporation]
Site Internet  http://www.ixys.com
Logo IXYS - IXYS Corporation

DSEC29-06AC Fiches technique(HTML) 5 Page - IXYS Corporation

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DSEC29-06AC
200
600
1000
0
400
800
70
80
90
100
110
120
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
040
80
120
160
0.0
0.5
1.0
1.5
2.0
0
200
400
600
800
1000
0
5
10
15
20
0.0
0.4
0.8
1.2
1.6
V
200
600
1000
0400
800
0
10
20
30
40
0
0
0
1
0
0
1
0
500
1000
1500
2000
01
2
0
10
20
30
40
K
f
T
VJ [°C]
t[s]
V
FR
[V]
I
RM
[A]
Q
r
[μC]
I
F
[A]
VF [V]
-di
F /dt [A/μs]
t
rr
[ns]
t
rr
[μs]
Z
thJC
[K/W]
-di
F /dt [A/μs]
-di
F /dt [A/μ
i
d
-
]
s
F /dt [A/μs]
Fig. 1 Forward current
I
F versus VF
Fig. 2 Typ. reverse recov. charge
Q
r versus -diF /dt
Fig. 3 Typ. peak reverse current
I
RM versus -diF/dt
Fig. 4 Dynamic parameters
Q
r,IRM versus TVJ
Fig. 5 Typ. recovery time
t
rr versus -diF /dt
Fig. 6 Typ. peak forward voltage
V
FR and tfr versus diF /dt
Fig. 7 Transient thermal impedance junction to case
V
FR
t
rr
Constants for Z
thJC calculation:
iR
thi (K/W)
t
i (s)
1
0.908
0.0052
2
0.350
0.0003
3
0.342
0.017
T
VJ =150°C
100°C
25°C
I
F =30A
15 A
7.5 A
T
VJ =100°C
V
R =300 V
T
VJ = 100°C
V
R = 300 V
I
F =30A
15 A
7.5 A
I
F = 30A
15 A
7.5 A
T
VJ =100°C
V
R =300 V
I
RM
Q
r
T
VJ =100°C
I
F
=15 A
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions.
20131024b
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved


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