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STB18NF25 Fiches technique(PDF) 3 Page - STMicroelectronics |
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STB18NF25 Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 18 page STB18NF25, STD18NF25 Electrical ratings Doc ID 16785 Rev 3 3/18 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 250 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 17 A ID Drain current (continuous) at TC=100 °C 12 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 68 A PTOT Total dissipation at TC = 25 °C 110 W dv/dt(2) 2. ISD ≤17 A, di/dt ≤ 200 A/µs, VDD ≤ 80%V(BR)DSS Peak diode recovery voltage slope 10 V/ns TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit D²PAK DPAK Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-pcb (1) 1. When mounted on 1inch² FR-4, 2 Oz copper board. Thermal resistance junction-pcb max 30 50 °C/W Table 4. Avalanche data Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 17 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAR, VDD=50 V) 170 mJ |
Numéro de pièce similaire - STB18NF25 |
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Description similaire - STB18NF25 |
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