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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SI4480DY Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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SI4480DY Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
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2 / 5 page  Si4480DY Rev A Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Single Pulse Drain-Source Avalanche Energy VDD = 40 V, ID = 7.6 A 245 mJ IAR Maximum Drain-Source Avalanche Current 7.6 A Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 80 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 81 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 22.5 4 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -7 mV/°C RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.6 A VGS = 10 V, ID = 7.6 A, TJ=125°C VGS = 6 V, ID = 7 A 0.022 0.037 0.024 0.029 0.055 0.033 Ω ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V 30 A gFS Forward Transconductance VDS = 5 V, ID = 7.6 A 28 S Dynamic Characteristics Ciss Input Capacitance 1800 pF Coss Output Capacitance 180 pF Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz 90 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 13 26 ns tr Turn-On Rise Time 8 20 ns td(off) Turn-Off Delay Time 34 60 ns tf Turn-Off Fall Time VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 16 30 ns Qg Total Gate Charge 34 46 nC Qgs Gate-Source Charge 6.1 nC Qgd Gate-Drain Charge VDS = 40 V, ID = 7.6 A, VGS = 10 V 6.9 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current 2.1 A VSD Drain-Source Diode Forward VoltageVGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) 50 ° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105 ° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125 ° C/W when mounted on a minimum pad. |
Numéro de pièce similaire - SI4480DY |
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Description similaire - SI4480DY |
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