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SI4480DY Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce SI4480DY
Description  80V N-Channel PowerTrench MOSFET
Download  5 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

SI4480DY Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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Si4480DY Rev. A
Si4480DY
80V N-Channel PowerTrench
MOSFET
January 2001
2001 Fairchild Semiconductor International
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
80
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
- Continuous
(Note 1a)
7.6
A
- Pulsed
50
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
4480
Si4480DY
13’’
12mm
2500 units
6
7
8
5
3
2
1
4
S
D
S
S
SO-8
D
D
D
G
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
7.6 A, 80 V. R
DS(ON
)
= 0.029
Ω @ V
GS = 10 V
R
DS(ON) = 0.033 Ω @ VGS = 6 V.
Low gate charge (34nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON).
High power and current handling capability.


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