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SI4466DY Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce SI4466DY
Description  Single N-Channel 2.5V Specified PowerTrench MOSFET
Download  5 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

SI4466DY Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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Si4466DY Rev. A
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%
a) 50
° C/W when
mounted on a 0.5 in2
pad of 2 oz. copper.
b) 105
° C/W when
mounted on a 0.02 in2
pad of 2 oz. copper.
c) 125
° C/W when
mounted on a 0.003 in2
pad of 2 oz. copper.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250
µA
20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
29
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
µA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
µA
0.4
0.9
1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
-4
mV/
°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = 4.5 V, ID =15 A
VGS = 4.5 V, ID =15 A,
TJ=125
°C
VGS = 2.5 V, ID =12 A
0.006
0.009
0.008
0.0075
0.0130
0.0100
ID(on)
On-State Drain Current
VGS = 4.5 V, VDS = 5.0 V
25
A
gFS
Forward Transconductance
VDS = 5 V, ID = 15 A
70
S
Dynamic Characteristics
Ciss
Input Capacitance
4700
pF
Coss
Output Capacitance
850
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
310
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
20
32
ns
tr
Turn-On Rise Time
27
44
ns
td(off)
Turn-Off Delay Time
95
133
ns
tf
Turn-Off Fall Time
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
35
56
ns
Qg
Total Gate Charge
47
66
nC
Qgs
Gate-Source Charge
7
nC
Qgd
Gate-Drain Charge
VDS = 10 V, ID = 15 A,
VGS = 5 V,
10.5
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.1
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.1 A (Note 2)
0.65
1.2
V
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V, VDS = 0 V
–100
nA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V, VDS = 0 V
100
nA


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