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BAV70T Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BAV70T Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 15 page BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 4 of 15 NXP Semiconductors BAV70 series High-speed switching diodes [1] Tj =25 °C prior to surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Reflow soldering is the only recommended soldering method. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. Ptot total power dissipation [2] BAV70 Tamb ≤ 25 °C - 250 mW BAV70M Tamb ≤ 25 °C [3] - 250 mW BAV70S Ts =60 °C - 350 mW BAV70T Ts =90 °C - 170 mW BAV70W Tamb ≤ 25 °C - 200 mW Per device IF forward current BAV70 Tamb ≤ 25 °C - 125 mA BAV70M Ts =90 °C - 75 mA BAV70S Ts =60 °C - 100 mA BAV70T Ts =90 °C - 75 mA BAV70W Tamb ≤ 25 °C - 100 mA Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per diode Rth(j-a) thermal resistance from junction to ambient in free air [1] BAV70 - - 500 K/W BAV70M [2] - - 500 K/W BAV70W - - 625 K/W Rth(j-t) thermal resistance from junction to tie-point BAV70 - - 360 K/W BAV70W - - 300 K/W Rth(j-sp) thermal resistance from junction to solder point BAV70S - - 255 K/W BAV70T - - 350 K/W |
Numéro de pièce similaire - BAV70T |
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Description similaire - BAV70T |
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