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IRF1010EPBF Fiches technique(PDF) 2 Page - Kersemi Electronic Co., Ltd.

No de pièce IRF1010EPBF
Description  Advanced Process Technology Ultra Low On-Resistance
Download  8 Pages
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Fabricant  KERSEMI [Kersemi Electronic Co., Ltd.]
Site Internet  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRF1010EPBF Fiches technique(HTML) 2 Page - Kersemi Electronic Co., Ltd.

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IRF1010EPbF
2
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 50A, VGS = 0V
„
trr
Reverse Recovery Time
–––
73
110
ns
TJ = 25°C, IF = 50A
Qrr
Reverse Recovery Charge
–––
220 330
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
84
‡
330
A
‚ Starting TJ = 25°C, L = 260µH
RG = 25Ω, IAS = 50A, VGS =10V (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ƒ ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.064 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
12
m
VGS = 10V, ID = 50A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
69
–––
–––
S
VDS = 25V, ID = 50A
„
–––
–––
25
µA
VDS = 60V, VGS = 0V
–––
–––
250
VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
130
ID = 50A
Qgs
Gate-to-Source Charge
–––
–––
28
nC
VDS = 48V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
44
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
12
–––
VDD = 30V
tr
Rise Time
–––
78
–––
ID = 50A
td(off)
Turn-Off Delay Time
–––
48
–––
RG = 3.6Ω
tf
Fall Time
–––
53
–––
VGS = 10V, See Fig. 10
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 3210 –––
VGS = 0V
Coss
Output Capacitance
–––
690
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
140
–––
pF
ƒ = 1.0MHz, See Fig. 5
EAS
Single Pulse Avalanche Energy
‚
––– 1180
…320† mJ
IAS = 50A, L = 260µH
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
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