Moteur de recherche de fiches techniques de composants électroniques
  French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

IRF1010EPBF Fiches technique(PDF) 1 Page - Kersemi Electronic Co., Ltd.

No de pièce IRF1010EPBF
Description  Advanced Process Technology Ultra Low On-Resistance
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  KERSEMI [Kersemi Electronic Co., Ltd.]
Site Internet  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRF1010EPBF Fiches technique(HTML) 1 Page - Kersemi Electronic Co., Ltd.

  IRF1010EPBF Datasheet HTML 1Page - Kersemi Electronic Co., Ltd. IRF1010EPBF Datasheet HTML 2Page - Kersemi Electronic Co., Ltd. IRF1010EPBF Datasheet HTML 3Page - Kersemi Electronic Co., Ltd. IRF1010EPBF Datasheet HTML 4Page - Kersemi Electronic Co., Ltd. IRF1010EPBF Datasheet HTML 5Page - Kersemi Electronic Co., Ltd. IRF1010EPBF Datasheet HTML 6Page - Kersemi Electronic Co., Ltd. IRF1010EPBF Datasheet HTML 7Page - Kersemi Electronic Co., Ltd. IRF1010EPBF Datasheet HTML 8Page - Kersemi Electronic Co., Ltd.  
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
IRF1010EPbF
07/04/07
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
1
VDSS = 60V
RDS(on) = 12mΩ
ID = 84A
‡
S
D
G
TO-220AB
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
84
‡
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
59
A
IDM
Pulsed Drain Current

330
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.4
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

50
A
EAR
Repetitive Avalanche Energy

17
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
4.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
www.kersemi.com


Html Pages

1  2  3  4  5  6  7  8 


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn