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IRF1010EPBF Fiches technique(PDF) 7 Page - Kersemi Electronic Co., Ltd.

No de pièce IRF1010EPBF
Description  Advanced Process Technology Ultra Low On-Resistance
Download  8 Pages
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Fabricant  KERSEMI [Kersemi Electronic Co., Ltd.]
Site Internet  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRF1010EPBF Fiches technique(HTML) 7 Page - Kersemi Electronic Co., Ltd.

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IRF1010EPbF
7
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[
] ***
Fig 14. For N-channel HEXFET® power MOSFETs
www.kersemi.com


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