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SI2319CDS-T1-GE3 Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI2319CDS-T1-GE3
Description  P-Channel 40 V (D-S) MOSFET
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SI2319CDS-T1-GE3 Fiches technique(HTML) 2 Page - Vishay Siliconix

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Document Number: 66709
S10-1286-Rev. A, 31-May-10
Vishay Siliconix
Si2319CDS
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 40
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 40
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
4.8
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = - 250 µA
- 1.2
- 2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 40 V, VGS = 0 V
- 1
µA
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
- 5
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 10 V
- 20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 3.1 A
0.064
0.077
Ω
VGS = - 4.5 V, ID = - 2.6 A
0.090
0.108
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 3.1 A
10
S
Dynamicb
Input Capacitance
Ciss
VDS = - 20 V, VGS = 0 V, f = 1 MHz
595
pF
Output Capacitance
Coss
76
Reverse Transfer Capacitance
Crss
61
Total Gate Charge
Qg
VDS = - 20 V, VGS = - 10 V, ID = - 3.1 A
13.6
21
nC
VDS = - 20 V, VGS = - 4.5 V, ID = - 3.1 A
711
Gate-Source Charge
Qgs
2.5
Gate-Drain Charge
Qgd
3.2
Gate Resistance
Rg
f = 1 MHz
0.8
4.3
8.6
Ω
Turn-On Delay Time
td(on)
VDD = - 20 V, RL = 8 Ω
ID ≅ - 2.5 A, VGEN = - 4.5 V, Rg = 1 Ω
40
60
ns
Rise Time
tr
27
41
Turn-Off Delay Time
td(off)
18
27
Fall Time
tf
10
20
Turn-On Delay Time
td(on)
VDD = - 20 V, RL = 8 Ω
ID ≅ - 2.5 A, VGEN = - 10 V, Rg = 1 Ω
816
Rise Time
tr
918
Turn-Off Delay Time
td(off)
20
30
Fall Time
tf
816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 2.1
A
Pulse Diode Forward Current
ISM
- 20
Body Diode Voltage
VSD
IS = - 2.5 A, VGS = 0 V
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 2.5 A, dI/dt = 100 A/µs, TJ = 25 °C
17
26
ns
Body Diode Reverse Recovery Charge
Qrr
918
nC
Reverse Recovery Fall Time
ta
10
ns
Reverse Recovery Rise Time
tb
7


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