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INA128 Fiches technique(PDF) 3 Page - Texas Instruments

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No de pièce INA128
Description  Precision, Low Power INSTRUMENTATION AMPLIFIERS
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

INA128 Fiches technique(HTML) 3 Page - Texas Instruments

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INA128
INA129
SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005
www.ti.com
3
ELECTRICAL CHARACTERISTICS
At TA = +25°C, VS = ±15V, RL = 10kΩ, unless otherwise noted.
INA128P, U
INA129P. U
INA128PA, UA
INA129PA, UA
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
INPUT
Offset Voltage, RTI
Initial
TA = +25°C
±10±100/G
±50±500/G
±25±100/G ±125±1000/G
µV
vs Temperature
TA = TMIN to TMAX
±0.2±2/G
±0.5±20/G
±0.2±5/G
±1±20/G
µV/°C
vs Power Supply
VS = ±2.25V to ±18V
±0.2±20/G
±1±100/G
±2±200/G
µV/V
Long-Term Stability
±0.1±3/G
µV/mo
Impedance, Differential
1010 || 2
Ω || pF
Common-Mode
1011 || 9
Ω || pF
Common-Mode Voltage Range(1)
VO = 0V
(V+) − 2
(V+) − 1.4
V
(V−) + 2
(V−) + 1.7
V
Safe Input Voltage
±40
V
Common-Mode Rejection
VCM =±13V, ∆RS = 1kΩ
G = 1
80
86
73
dB
G = 10
100
106
93
dB
G = 100
120
125
110
dB
G = 1000
120
130
110
dB
BIAS CURRENT
±2
±5
±10
nA
vs Temperature
±30
pA/
°C
Offset Current
±1
±5
±10
nA
vs Temperature
±30
pA/
°C
NOISE VOLTAGE, RTI
G = 1000, RS = 0Ω
f = 10Hz
10
nV/
√Hz
f = 100Hz
8
nV/
√Hz
f = 1kHz
8
nV/
√Hz
fB = 0.1Hz to 10Hz
0.2
µVPP
Noise Current
f = 10Hz
0.9
pA/
√Hz
f = 1kHz
0.3
pA/
√Hz
fB = 0.1Hz to 10Hz
30
pAPP
GAIN
Gain Equation, INA128
1 + (50k
Ω/RG)
V/V
Gain Equation, INA129
1 + (49.4k
Ω/RG)
V/V
Range of Gain
1
10000
V/V
Gain Error
G = 1
±0.01
±0.024
±0.1
%
G = 10
±0.02
±0.4
±0.5
%
G = 100
±0.05
±0.5
±0.7
%
G = 1000
±0.5
±1
±2
%
Gain vs Temperature(2)
G = 1
±1
±10
ppm/
°C
50k
Ω (or 49.4kΩ) Resistance(2)(3)
±25
±100
ppm/
°C
Nonlinearity
VO = ±13.6V, G = 1
±0.0001
±0.001
±0.002
% of FSR
G = 10
±0.0003
±0.002
±0.004
% of FSR
G = 100
±0.0005
±0.002
±0.004
% of FSR
G = 1000
±0.001
(4)
% of FSR
NOTE:
∗ Specification is same as INA128P, U or INA129P, U.
(1) Input common-mode range varies with output voltage — see typical curves.
(2) Specified by wafer test.
(3) Temperature coefficient of the 50kΩ (or 49.4kΩ) term in the gain equation.
(4) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.


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