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RF1K49157 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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RF1K49157 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page 5-65 Absolute Maximum Ratings TA = 25oC Unless Otherwise Specified RF1K49157 UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 30 V Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 30 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Drain Current Continuous (Pulse width = 1s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 6.3 Refer to Peak Current Curve A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve Power Dissipation TA = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 0.016 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -55 to 150 oC Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TA = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA1 - 3 V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V TA = 25 oC- - 1 µA TA = 150 oC- - 50 µA Gate to Source Leakage Current IGSS VGS = ±20V - - 100 nA On Resistance rDS(ON) ID = 6.3A VGS = 10V - - 0.030 Ω VGS = 4.5V - - 0.060 Ω Turn-On Time tON VDD = 15V, ID = 6.3A, RL = 2.38Ω, VGS = 10V, RGS = 25Ω - - 85 ns Turn-On Delay Time td(ON) -22- ns Rise Time tr -43- ns Turn-Off Delay Time td(OFF) - 125 - ns Fall Time tf -85- ns Turn-Off Time tOFF - - 265 ns Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 24V, ID = 6.3A, RL = 3.81Ω -70 88 nC Gate Charge at 10V Qg(10) VGS = 0V to 10V - 38 48 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 2.8 3.5 nC Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz - 1575 - pF Output Capacitance COSS - 700 - pF Reverse Transfer Capacitance CRSS - 200 - pF Thermal Resistance Junction-to-Ambient R θJA Pulse width = 1s Device mounted on FR-4 material - - 62.5 oC/W Source to Drain Diode Ratings and Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage VSD ISD = 6.3A - - 1.25 V Reverse Recovery Time trr ISD = 6.3A, dISD/dt = 100A/µs- - 60 ns RF1K49157 |
Numéro de pièce similaire - RF1K49157 |
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Description similaire - RF1K49157 |
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