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RF1K49086 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce RF1K49086
Description  3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET™ Enhancement Mode Power MOSFET
Download  7 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

RF1K49086 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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5-58
Absolute Maximum Ratings
TA = 25
oC Unless Otherwise Specified
RF1K49086
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
30
V
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Drain Current
Continuous (Pulse Width = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
3.5
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Refer to UIS Curve
Power Dissipation
TA = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
0.016
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
-55 to 150
oC
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TA = 25
oC, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
30
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA1
-
3
V
Zero Gate Voltage Drain Current
IDSS
VDS = 30V,
VGS = 0V
TA = 25
oC-
-
1
µA
TA = 150
oC-
-
50
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
100
nA
On Resistance
rDS(ON)
ID = 3.5A
VGS = 10V
-
-
0.060
VGS = 4.5V
-
-
0.132
Turn-On Time
tON
VDD = 15V, ID = 3.5A,
RL = 4.29Ω, VGS = 10V,
RGS = 25Ω
-
-
50
ns
Turn-On Delay Time
td(ON)
-10-
ns
Rise Time
tr
-30-
ns
Turn-Off Delay Time
td(OFF)
-60-
ns
Fall Time
tf
-45-
ns
Turn-Off Time
tOFF
-
-
130
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
VDD = 24V,
ID = 3.5A,
RL = 6.86Ω
-35
45
nC
Gate Charge at 10V
Qg(10)
VGS = 0V to 10V
-
13
17
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
2.3
2.9
nC
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
-
575
-
pF
Output Capacitance
COSS
-
275
-
pF
Reverse Transfer Capacitance
CRSS
-
100
-
pF
Thermal Resistance Junction-to-Ambient
RθJA
Pulse Width = 1s
Device mounted on FR-4 material
-
-
62.5
oC/W
Source to Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
VSD
ISD = 3.5A
-
-
1.25
V
Reverse Recovery Time
trr
ISD = 3.5A, dISD/dt = 100A/µs-
-
45
ns
RF1K49086


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