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RF1K49086 Fiches technique(PDF) 4 Page - Fairchild Semiconductor

No de pièce RF1K49086
Description  3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET™ Enhancement Mode Power MOSFET
Download  7 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

RF1K49086 Fiches technique(HTML) 4 Page - Fairchild Semiconductor

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FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. rDS(ON) FOR VARYING CONDITIONS OF GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves (Continued)
0
5
10
15
0
1.0
2.0
3.0
4.0
5.0
VGS = 3V
20
25
VGS = 4V
VGS = 10V
VGS = 20V
VGS = 4.5V
VGS = 5V
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 250
µs, TA = 25oC
0.0
3.0
4.5
6.0
7.5
1.5
0
5
10
15
20
25
150oC
PULSE TEST
PULSE DURATION = 250
µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
VGS, GATE TO SOURCE VOLTAGE (V)
-55oC
25oC
50
100
150
200
250
0
6.0
4.0
7.0
5.0
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 0.5A
3.0
8.0
9.0
10.0
PULSE DURATION = 250
µs, VDD = 15V
ID = 1.75A
ID = 3.5A
ID = 7.0A
0.0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
PULSE DURATION = 250
µs, VGS = 10V, ID = 3.5A
-80
-40
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
TJ, JUNCTION TEMPERATURE (
oC)
VGS = VDS, ID = 250µA
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
ID = 250µA
RF1K49086


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