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FDN86246 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDN86246
Description  N-Channel PowerTrench짰 MOSFET
Download  6 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN86246 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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©2010 Fairchild Semiconductor Corporation
FDN86246 Rev.C
www.fairchildsemi.com
2
Electrical Characteristics T
J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 PA, VGS = 0 V
150
V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 PA, referenced to 25 °C
106
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 120 V, VGS = 0 V
1
PA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 PA2
3.4
4
V
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 PA, referenced to 25 °C
-9
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 1.6 A
195
261
m
:
VGS = 6 V, ID = 1.4 A
242
359
VGS = 10 V, ID = 1.6 A, TJ = 125 °C
359
481
gFS
Forward Transconductance
VDS = 10 V, ID = 1.6 A
4
S
(Note 2)
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
168
225
pF
Coss
Output Capacitance
21
30
pF
Crss
Reverse Transfer Capacitance
1.6
5
pF
Rg
Gate Resistance
0.9
:
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 75 V, ID = 1.6 A,
VGS = 10 V, RGEN = 6 :
4.5
10
ns
tr
Rise Time
1.1
10
ns
td(off)
Turn-Off Delay Time
8
16
ns
tf
Fall Time
2.9
10
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
VDD = 75 V,
ID = 1.6 A
2.9
5
nC
Qg
Total Gate Charge
VGS = 0 V to 5 V
1.6
3
nC
Qgs
Gate to Source Gate Charge
0.9
nC
Qgd
Gate to Drain “Miller” Charge
0.8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 1.6 A
(Note 2)
0.83
1.3
V
trr
Reverse Recovery Time
IF = 1.6 A, di/dt = 100 A/Ps
44
70
ns
Qrr
Reverse Recovery Charge
29
47
nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RTJC is guaranteed by design while RTCA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300
Ps, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 150 V, VGS = 10 V.
80 °C/W when mounted on a
1 in2 pad of 2 oz copper
a)
180 °C/W when mounted on a
minimum pad.
b)


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