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FDN86246 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDN86246 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2010 Fairchild Semiconductor Corporation FDN86246 Rev.C www.fairchildsemi.com 1 December 2010 FDN86246 N-Channel PowerTrench® MOSFET 150 V, 1.6 A, 261 m : Features Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Application PD Switch MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 150 V VGS Gate to Source Voltage ±20 V ID -Continuous (Note 1a) 1.6 A -Pulsed 6 EAS Single Pulse Avalanche Energy (Note 3) 13 mJ PD Power Dissipation (Note 1a) 1.5 W Power Dissipation (Note 1b) 0.6 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RTJC Thermal Resistance, Junction to Case (Note 1) 75 °C/W RTJA Thermal Resistance, Junction to Ambient (Note 1a) 80 Device Marking Device Package Reel Size Tape Width Quantity 246 FDN86246 SSOT-3 7 ’’ 8 mm 3000 units |
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