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MJE4353G Fiches technique(PDF) 4 Page - ON Semiconductor |
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MJE4353G Fiches technique(HTML) 4 Page - ON Semiconductor |
4 / 8 page MJE4343 (NPN), MJE4353 (PNP) http://onsemi.com 4 Figure 2. Switching Times Test Circuit +11 V 25 ms 0 -9.0 V RB -4 V D1 SCOPE VCC +30 V RC tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 51 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 3.0 IC, COLLECTOR CURRENT (AMP) TJ = 25°C IC/IB = 10 VCE = 30 V 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.2 0.5 0.7 5.0 2.0 1.0 3.0 20 Figure 3. Typical Turn−On Time 10 7.0 tr 0.3 Note: Reverse polarities to test PNP devices. td @ VBE(off) = 5.0 V 5.0 IC, COLLECTOR CURRENT (AMP) 0.5 3.0 2.0 1.0 Figure 4. Turn−Off Time 0.7 0.2 0.5 0.7 5.0 2.0 0.3 1.0 3.0 20 10 7.0 TJ = 25°C IC/IB = 10 IB1 = IB2 VCE = 30 V ts tf 2.0 0.2 IC, COLLECTOR CURRENT (AMP) 20 1.6 1.2 0.8 0.4 0 10 7.0 0.3 0.7 0.5 2.0 1.0 5.0 3.0 TJ = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V Figure 5. On Voltages TYPICAL CHARACTERISTICS |
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