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4N36-X Fiches technique(PDF) 2 Page - Vishay Siliconix |
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4N36-X Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 7 page 4N35-X, 4N36-X, 4N37-X, 4N38 www.vishay.com Vishay Semiconductors Rev. 1.8, 16-Jan-12 2 Document Number: 83717 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP). ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6V Forward current IF 60 mA Surge current t ≤ 10 μs IFSM 2.5 A Power dissipation Pdiss 70 mW OUTPUT Collector emitter breakdown voltage VCEO 70 V Emitter base breakdown voltage VEBO 7V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Output power dissipation Pdiss 150 mW COUPLER Isolation test voltage t = 1 s VISO 5000 VRMS Creepage distance ≥ 7mm Clearance distance ≥ 7mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index DIN IEC 112/VDE 0303, part 1 ≥ 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Soldering temperature (1) 2 mm from case, ≤ 10 s Tsld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage (1) IF = 10 mA VF 1.2 1.5 V IF = 10 mA, Tamb = - 55 °C VF 0.9 1.3 1.7 V Reverse current (1) VR = 6 V IR 0.1 10 μA Capacitance VR = 0 V, f = 1 MHz CO 25 pF OUTPUT Collector emitter breakdown voltage (1) IC = 1 mA 4N35 BVCEO 30 V 4N36 BVCEO 30 V 4N37 BVCEO 30 V 4N38 BVCEO 80 V Emitter collector breakdown voltage (1) IE = 100 μA BVECO 7V Collector base breakdown voltage (1) IC = 100 μA, IB = 1 μA 4N35 BVCBO 70 V 4N36 BVCBO 70 V 4N37 BVCBO 70 V 4N38 BVCBO 80 V |
Numéro de pièce similaire - 4N36-X |
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Description similaire - 4N36-X |
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