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TPS2010PWR Fiches technique(PDF) 2 Page - Texas Instruments |
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TPS2010PWR Fiches technique(HTML) 2 Page - Texas Instruments |
2 / 21 page TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 AVAILABLE OPTIONS RECOMMENDED MAXIMUM TYPICAL SHORT-CIRCUIT PACKAGED DEVICES CHIP TJ CONTINUOUS LOAD CURRENT (A) OUTPUT CURRENT LIMIT AT 25 °C (A) SOIC (D)† TSSOP (PW)‡ FORM (Y) 0.2 0.4 TPS2010D TPS2010PWLE TPS2010Y 40 °Cto125°C 0.6 1.2 TPS2011D TPS2011PWLE TPS2011Y – 40 °C to 125°C 1 2 TPS2012D TPS2012PWLE TPS2012Y 1.5 2.6 TPS2013D TPS2013PWLE TPS2013Y † The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2010DR). ‡ The PW package is only available left-end taped and reeled (indicated by the LE suffix on the device type; e.g., TPS2010PWLE). functional block diagram Power Switch Current Limit Driver Thermal Sense Charge Pump IN EN GND OUT CS † † Current sense Terminal Functions TERMINAL NAME NO. I/O DESCRIPTION NAME D PW EN 4 7 I Enable input. Logic low turns power switch on. GND 1 1 I Ground IN 2, 3 2–6 I Input voltage OUT 5–8 8–14 O Power-switch output detailed description power switch The power switch is an N-channel MOSFET with a maximum on-state resistance of 95 m Ω (VI(IN) = 5.5 V), configured as a high-side switch. charge pump An internal 100-kHz charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires very little supply current. |
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