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2SC4536 Fiches technique(PDF) 3 Page - Renesas Technology Corp

No de pièce 2SC4536
Description  NPN EPITAXIAL SILICON RF TRANSISTOR FOR
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4536 Fiches technique(HTML) 3 Page - Renesas Technology Corp

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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC4536
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
The mark
• shows major revised points.
Document No. PU10338EJ01V0DS (1st edition)
(Previous No. P10369EJ2V1DS00)
Date Published May 2003 CP(K)
Printed in Japan
©
©
©
© NEC Compound Semiconductor Devices 1994, 2003
DESCRIPTION
The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier.
It features
excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it
employs plastic surface mount type package (SOT-89).
FEATURES
• Low distortion: IM2 = 59.0 dBc TYP., IM3 = 82.0 dBc TYP. @ VCE = 10 V, IC = 50 mA
• Low noise: NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
• Large Ptot : Ptot = 2.0 W (Mounted on double-sided copper-clad 16 cm
2
× 0.7 mm (t) ceramic substrate)
• Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC4536
25 pcs (Non reel)
• 12 mm wide embossed taping
2SC4536-T1
1 kpcs/reel
• Collector face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
15
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
250
mA
Total Power Dissipation
Ptot
Note
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on double-sided copper-clad 16 cm
2
× 0.7 mm (t) ceramic substrate


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