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TPC8053-H Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce TPC8053-H
Description  TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8053-H Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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TPC8053-H
2009-08-18
2
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a)
Rth (ch-a)
65.8
°C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b)
Rth (ch-a)
125
°C/W
Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = 9 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: * Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
TPC8053
H
(a)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
Lot No.
Part No.
(or abbreviation code)
Note
Note: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment


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