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STB42N65M5 Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STB42N65M5
Description  N-channel 650 V, 0.070 廓, 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Electrical characteristics
STx42N65M5
4/18
Doc ID 15317 Rev 3
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
650
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on
Static drain-source on
resistance
VGS = 10 V, ID = 16.5 A
0.070
0.079
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
4650
110
3.2
-
pF
pF
pF
Co(er)
(1)
1.
Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS
Equivalent output
capacitance energy
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
-100
-
pF
Co(tr)
(2)
2.
Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS
Equivalent output
capacitance time
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
-285
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
1.1
-
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 16.5 A,
VGS = 10 V
(see
Figure 20)
-
100
26
38
-
nC
nC
nC


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