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N0501S-T1-AT Fiches technique(PDF) 3 Page - Renesas Technology Corp

No de pièce N0501S-T1-AT
Description  NPN SILICON EPITAXIAL TRANSISTOR
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

N0501S-T1-AT Fiches technique(HTML) 3 Page - Renesas Technology Corp

  N0501S-T1-AT Datasheet HTML 1Page - Renesas Technology Corp N0501S-T1-AT Datasheet HTML 2Page - Renesas Technology Corp N0501S-T1-AT Datasheet HTML 3Page - Renesas Technology Corp N0501S-T1-AT Datasheet HTML 4Page - Renesas Technology Corp N0501S-T1-AT Datasheet HTML 5Page - Renesas Technology Corp  
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N0501S
R07DS0725EJ0100
Rev.1.00
Page 3 of 5
Mar 30, 2012
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0.0001
0.001
0.01
0.1
1
10
TA = 125˚C
25˚C
−25˚C
VBE - Base to Emitter Voltage - (V)
0.0
0.3
0.6
0.9
1.2
VCE = 6 V
Pulsed
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
100
1000
VCE = 6 V
1000
100
10
1
IC - Collector Current - (mA)
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1
10
100
100
10
1
0.1
VCB - Collector to Base Voltage - (V)
IE = 0
f = 1.0 MHz
SWITCHING TIME vs.
COLLECTOR CURRENT
10
100
10000
1000
IC - Collector Current - (mA)
10
100
1000
10000
VCE = 10 V
IC = 20IB1 =
−20IB2
PW = 50
μs
ton
tf
tstg


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