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SL12T1G Fiches technique(PDF) 3 Page - ON Semiconductor |
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SL12T1G Fiches technique(HTML) 3 Page - ON Semiconductor |
3 / 5 page SL05T1 Series http://onsemi.com 3 ELECTRICAL CHARACTERISTICS Device Device Marking VRWM IR @ VRWM Breakdown Voltage (Note 4) VC, Clamping Voltage (Note 5) Max IPP Capacitance VBR @ 1 mA (Volts) @ 1 A @ 5 A @ VR = 0 V, 1 MHz (pF) (V) (mA) Min Max (V) (V) (A) Typ Max SL05 L05 5.0 20 6.0 8.0 9.8 11 17 3.5 5.0 SL12 L12 12 1.0 13.3 15.5 19 24 12 3.5 5.0 SL15 L15 15 1.0 16.7 18.5 24 30 10 3.5 5.0 SL24 L24 24 1.0 26.7 29 43 55 5.0 3.5 5.0 4. VBR measured at pulse test current of 1 mA at an ambient temperature of 25°C 5. Surge current waveform per Figure 2 TYPICAL CHARACTERISTICS 0.1 10 10 Figure 1. Maximum Peak Power Rating 1 PULSE WIDTH (ms) 100 1000 1 0.1 0.01 Figure 2. 8 × 20 ms Pulse Waveform 100 90 80 70 60 50 40 30 20 10 0 020 40 60 t, TIME (ms) tP tr PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms PEAK VALUE IRSM @ 8 ms HALF VALUE IRSM/2 @ 20 ms 80 Figure 3. Typical Junction Capacitance −55 25 150 10 1 0.1 0.01 Figure 4. Typical Leakage Over Temperature TEMPERATURE (°C) @ 50% VRWM 4 3.5 3 2 1.5 0.5 0 2.5 1 @ ZERO BIAS @ VRWM SL05 SL15 SL24 SL05T1 |
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