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SI5330C-A00209-GM Fiches technique(PDF) 8 Page - Silicon Laboratories |
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SI5330C-A00209-GM Fiches technique(HTML) 8 Page - Silicon Laboratories |
8 / 20 page Si5330 8 Rev. 1.0 Table 9. Absolute Maximum Ratings1,2,3,4,5 Parameter Symbol Test Condition Value Unit DC Supply Voltage VDD –0.5 to 3.8 V Storage Temperature Range TSTG –55 to 150 °C ESD Tolerance HBM (100 pF, 1.5 k ) 2.5 kV ESD Tolerance CDM 550 V ESD Tolerance MM 175 V Latch-up Tolerance JESD78 Compliant Junction Temperature TJ 150 °C Soldering Temperature (Pb-free profile)5 TPEAK 260 °C Soldering Temperature Time at TPEAK (Pb-free profile)5 TP 20–40 sec Notes: 1. Permanent device damage may occur if the Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to maximum rating conditions for extended periods may affect device reliability. 2. 24-QFN package is RoHS compliant. 3. For more packaging information, go to www.silabs.com/support/quality/pages/RoHSInformation.aspx. 4. Moisture sensitivity level is MSL3. 5. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components. |
Numéro de pièce similaire - SI5330C-A00209-GM |
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Description similaire - SI5330C-A00209-GM |
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