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STB80NF06T4 Fiches technique(PDF) 4 Page - STMicroelectronics |
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STB80NF06T4 Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STP80NF06 - STB80NF06 - STW80NF06 4/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown voltage ID = 250 µA, VGS = 0 60 V IDSS Zero gate voltage Drain current (VGS = 0) VDS = Max rating 1 µA VDS=Max rating, TC=125°C 10 µA IGSS Gate-body leakage current (VDS = 0) VGS = ±20V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 40A 0.0065 0.008 Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS = 2.5V, ID=18A 20 S Ciss Input capacitance VDS = 25V, f = 1 MHz, VGS = 0 3850 pF Coss Output capacitance 800 pF Crss Reverse transfer capacitance 250 pF Qg Total gate charge VDD = 80V, ID = 80A, VGS = 10V 115 150 nC Qgs Gate-source charge 24 nC Qgd Gate-drain charge 46 nC Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 27V, ID = 40A RG =4.7Ω VGS = 10V (see Figure 13) 25 85 ns ns td(off) tf Turn-off-delay time Fall time VDD = 27V, ID = 40A, RG =4.7Ω, VGS = 10V (see Figure 13) 70 25 ns ns td(off) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp =44V, ID =80A RG =4.7Ω, VGS = 10V (see Figure 15) 85 75 110 ns ns ns |
Numéro de pièce similaire - STB80NF06T4 |
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Description similaire - STB80NF06T4 |
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