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74HCT32BQ Fiches technique(PDF) 4 Page - NXP Semiconductors |
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74HCT32BQ Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 17 page 74HC_HCT32 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 5 — 4 September 2012 4 of 17 NXP Semiconductors 74HC32; 74HCT32 Quad 2-input OR gate 7. Limiting values [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For DIP14 package: Ptot derates linearly with 12 mW/K above 70 C. For SO14 package: Ptot derates linearly with 8 mW/K above 70 C. For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C. For DHVQFN14 packages: Ptot derates linearly with 4.5 mW/K above 60 C. 8. Recommended operating conditions Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage 0.5 +7 V IIK input clamping current VI < 0.5 V or VI >VCC +0.5 V [1] - 20 mA IOK output clamping current VO < 0.5 V or VO >VCC +0.5 V [1] - 20 mA IO output current 0.5 V < V O < VCC +0.5 V - 25 mA ICC supply current - 50 mA IGND ground current 50 - mA Tstg storage temperature 65 +150 C Ptot total power dissipation [2] DIP14 package - 750 mW SO14, (T)SSOP14 and DHVQFN14 packages - 500 mW Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V) Symbol Parameter Conditions 74HC32 74HCT32 Unit Min Typ Max Min Typ Max VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 - VCC 0- VCC V VO output voltage 0 - VCC 0- VCC V Tamb ambient temperature 40 - +125 40 - +125 C t/V input transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V VCC = 6.0 V --83 - --ns/V |
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