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UF1000F Datasheet(Fiches technique) 1 Page - Yea Shin Technology Co., Ltd

Numéro de pièce UF1000F
Description  ULT RAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes
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Fabricant  YEASHIN [Yea Shin Technology Co., Ltd]
Site Internet  http://www.yeashin.com
Logo YEASHIN - Yea Shin Technology Co., Ltd

UF1000F Datasheet(HTML) 1 Page - Yea Shin Technology Co., Ltd

  UF1000F Datasheet HTML 1Page - Yea Shin Technology Co., Ltd UF1000F Datenblatt HTML 2Page - Yea Shin Technology Co., Ltd  
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ULT RAFAST SWITCHING RECTIFIER
VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing
Flame Retardant Epoxy Molding Compound
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency
• Low forward voltage, high current capability
• High surge capacity
• Ultra Fast recovery times, high voltage
High temperature soldering : 260
OC / 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
MECHANCALDATA
• Case: ITO-220AC full molded plastic package
• Terminals: Lead solderable per MIL-STD-202, Method 208
• Polarity: As marked
• Mounting Position: Any
• Weight: 0.08 ounce, 2.26 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
OC
•ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
TYPE NUMBER
UF1000F
UF1001F
UF1002F
UF1003F
UF1004F
UF1006F
UF1008F UNITS
Maximum Recurrent Peak Reverse V oltage
50
100
200
300
400
600
800
V
Maximum RMS Voltage
35
70
140
210
280
420
560
V
Maximum DC Blocking Voltage
50
100
200
300
400
600
800
V
Maximum Average Forward Rectif ied
Cur rent . 375” (9.5mm) lead length @ TC=100
10
A
Peak Forward Surge Current , 8.3ms single half sine
wave superimposed on rated load(J ECEC method)
150
A
Maximum Instantaneous Forward Voltage a t 10.0A
1.0
1.3
1.7
V
Maxi mum DC Reverse Current
@TA=25
at Rated DC Blocking Vol tage
@TA=125
10.0
500
µA
Maximum Reverse Recovery Time(Note 1)
50
75
nS
Typi cal Junction capaci tance (Note 2)
80
50
pF
Typi cal Junction Resi stance (Note 2) R JA
15
Operating and Storage Temperature Range T J,TSTG
-55 to +150
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B.mounted
ITO-220AC
Unit:inch(mm)
.161(4.1)
MAX
.130(3.3)
MAX
.185(4.8)
MAX
.272(6.9)
.248(6.3)
.055(1.4)
MAX
.035(0.9)
MAX
.100(2.55)
.543(13.8)
.512(13.0 )
.100(2.55)
.114(2.9)
.098(2.5)
.032(0.8)
MAX
.606(15.4)
.583(14.8)
.112(2.85)
.100(2.55)
.406(10.3)MAX
.134(3.4)DIA
.113(3.0)DIA
DATA SHEET
UF1000F~UF1008F
SEMICONDUCTOR
http://www.yeashin.com
1
REV.02 20110725
°C
°C/W
°C
°C
°C


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