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IRF7303TR Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF7303TR
Description  Generation V Technology
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7303TR Fiches technique(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
PD - 9.1239D
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications.
With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
IRF7303
SO-8
D1
D1
D2
D2
G1
S2
G2
S1
Top V iew
8
1
2
3
4
5
6
7
Parameter
Max.
Units
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ 10V
5.3
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
4.9
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
3.9
IDM
Pulsed Drain Current

20
PD @TA = 25°C
Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt
‚
5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
A
VDSS = 30V
RDS(on) = 0.050Ω
8/25/97
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
„
–––
62.5
°C/W


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