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TC--350 Datasheet(Fiches technique) 2 Page - Freescale Semiconductor, Inc

Numéro de pièce TC--350
Description  RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Télécharger  23 Pages
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Fabricant  FREESCALE [Freescale Semiconductor, Inc]
Site Internet  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

TC--350 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +133
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
C
Case Operating Temperature
TC
150
C
Total Device Dissipation @ TC =25C
Derate above 25C
PD
1333
6.67
W
W/C
Operating Junction Temperature (1,2)
TJ
225
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 63C, 1250 W CW, IDQ = 100 mA, 230 MHz
RJC
0.15
C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 66C, 1250 W Pulse, 100 sec Pulse Width, 20% Duty Cycle,
IDQ = 100 mA, 230 MHz
ZJC
0.03
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 3500 V
Machine Model (per EIA/JESD22--A115)
B, passes 250 V
Charge Device Model (per JESD22--C101)
IV, passes 4000 V
Table 4. Electrical Characteristics (TA =25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (4)
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
1
Adc
Drain--Source Breakdown Voltage
(VGS =0 Vdc, ID = 100 mA)
V(BR)DSS
133
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
20
Adc
On Characteristics
Gate Threshold Voltage (4)
(VDS =10 Vdc, ID = 1776 Adc)
VGS(th)
1.7
2.2
2.7
Vdc
Gate Quiescent Voltage
(VDD =50 Vdc, ID = 100 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.2
2.9
Vdc
Drain--Source On--Voltage (4)
(VGS =10 Vdc, ID =2 Adc)
VDS(on)
0.15
Vdc
Forward Transconductance
(VDS =10 Vdc, ID =30 Adc)
gfs
28.0
S
Dynamic Characteristics (4)
Reverse Transfer Capacitance
(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
2.8
pF
Output Capacitance
(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
185
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
562
pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)


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