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TC--350 Fiches technique(PDF) 14 Page - Freescale Semiconductor, Inc

No de pièce TC--350
Description  RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
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Fabricant  FREESCALE [Freescale Semiconductor, Inc]
Site Internet  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

TC--350 Fiches technique(HTML) 14 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
TYPICAL CHARACTERISTICS — 144--148 MHz REFERENCE CIRCUIT
VDD =50 Vdc,IDQ = 200 mA, Pout = 1100 W CW
f
MHz
Zsource
Zload
144
1.6 + j5.0
3.9 + j1.5
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured from
drain to drain, balanced configuration.
Figure 19. Series Equivalent 144--148 MHz Reference Circuit Source and Load Impedance
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
--
+
+
Zsource
Zload
50 
50 
31
20
90
50
28
70
50
Pout, OUTPUT POWER (WATTS)
Figure 20. Power Gain and Drain Efficiency
versus Output Power
26
24
2000
25
40
60
80
27
29
1000
D
VDD =50 Vdc,IDQ = 2500 mA, f = 144 MHz
30
100
30
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 21. Intermodulation Distortion Products
versus Output Power
--100
0
--20
--50
--60
--70
--80
--90
--30
--40
IDQ = 2500 mA
10
1000
--20
100
2000
VDD =50 Vdc
f1 = 143.9 MHz, f2 = 144.1 MHz
Two--Tone Measurement
3rd Order
3rd Order
7th Order
7th Order
5th Order
4500 mA
4500 mA
Gps


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