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TC--350 Fiches technique(PDF) 1 Page - Freescale Semiconductor, Inc

No de pièce TC--350
Description  RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
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Fabricant  FREESCALE [Freescale Semiconductor, Inc]
Site Internet  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

TC--350 Fiches technique(HTML) 1 Page - Freescale Semiconductor, Inc

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MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
 Typical Performance: VDD =50 Volts,IDQ = 100 mA
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
Pulse
(100 sec, 20% Duty Cycle)
1250 Peak
230
24.0
74.0
CW
1250 CW
230
22.9
74.6
Application Circuits (1) — Typical Performance
Frequency
(MHz)
Signal Type
Pout
(W)
Gps
(dB)
D
(%)
27
CW
1300
27
81
40
CW
1300
26
85
81.36
CW
1250
27
84
87.5--108
CW
1100
24
80
144--148
CW
1250
26
78
170--230
DVB--T
225
25
30
352
Pulse
(200 sec,
20% Duty Cycle)
1250
21.5
66
352
CW
1150
20.5
68
500
CW
1000
18
58
1. Contact your local Freescale sales office for additional information on specific
circuit designs.
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pout
(W)
Test
Voltage
Result
230
Pulse
(100 sec, 20%
Duty Cycle)
>65:1 at all
Phase Angles
1500 Peak
(3 dB
Overdrive)
50
No Device
Degradation
Features
 Unmatched Input and Output Allowing Wide Frequency Range Utilization
 Device can be used Single--Ended or in a Push--Pull Configuration
 Qualified Up to a Maximum of 50 VDD Operation
 Characterized from 30 V to 50 V for Extended Power Range
 Suitable for Linear Application with Appropriate Biasing
 Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
for Improved Class C Operation
 Characterized with Series Equivalent Large--Signal Impedance Parameters
 In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: MRFE6VP61K25H
Rev. 4, 3/2013
Freescale Semiconductor
Technical Data
1.8--600 MHz, 1250 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
MRFE6VP61K25HR6
MRFE6VP61K25HSR5
MRFE6VP61K25GSR5
(Top View)
Drain A
31
Figure 1. Pin Connections
42 Drain B
Gate A
Gate B
NI--1230--4H
MRFE6VP61K25HR6
NI--1230--4S
MRFE6VP61K25HSR5
Note: The backside of the package is the
source terminal for the transistor.
NI--1230--4S GULL
MRFE6VP61K25GSR5
 Freescale Semiconductor, Inc., 2010--2013. All rights reserved.


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