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TC--350 Fiches technique(PDF) 8 Page - Freescale Semiconductor, Inc

No de pièce TC--350
Description  RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Download  23 Pages
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Fabricant  FREESCALE [Freescale Semiconductor, Inc]
Site Internet  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

TC--350 Fiches technique(HTML) 8 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
VDD =50 Vdc,IDQ = 100 mA
f
(MHz)
Zsource
()
Zload
()
1.8 (1)
34.4 + j192.0 (1)
5.00 - j4.00 (1)
27
12.5 + j7.00
7.00 + j0.70
40
5.75 + j5.06
5.39 + j2.62
81.36
4.04 + j5.93
4.89 + j2.95
88
2.20 + j6.70
4.90 + j2.90
98
2.30 + j6.90
4.10 + j2.50
108
2.30 + j7.00
4.40 + j3.60
144
1.60 + j5.00
3.90 + j1.50
175
1.33 + j3.90
3.50 + j2.50
230
1.29 + j3.54
2.12 + j2.68
352
0.98 + j1.45
1.82 + j2.05
500
0.29 + j1.47
1.79 + j1.80
1. Simulated data.
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
--
+
+
Zsource
Zload
50 
50 
Figure 12. Source and Load Impedances Optimized for IRL, Power and Efficiency — Push--Pull


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