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TC--350 Fiches technique(PDF) 6 Page - Freescale Semiconductor, Inc

No de pièce TC--350
Description  RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Download  23 Pages
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Fabricant  FREESCALE [Freescale Semiconductor, Inc]
Site Internet  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

TC--350 Fiches technique(HTML) 6 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
TYPICAL CHARACTERISTICS
50
10
2000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
30
Ciss
1000
100
40
Coss
Measured with 30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
Note: Each side of device measured separately.
1
59
66
35
Pin, INPUT POWER (dBm) PEAK
Figure 5. Output Power versus Input Power
64
36
37
38
39
40
41
42
63
60
Actual
Ideal
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
P1dB = 61.3 dBm
(1333 W)
62
61
65
P3dB = 61.9 dBm (1553 W)
P2dB = 61.7 dBm (1472 W)
26
30
90
100
24
70
50
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
22
20
2000
21
40
60
80
23
25
16
23
0
20
19
Pout, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain versus Output Power
200
18
1400 1600
17
400
800
1000
1200
VDD =30 V
50 V
21
22
25
24
26
600
35 V
40 V
45 V
20
90
0
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Drain Efficiency versus Output Power
70
200
400
600
800
1000
1200
1400
60
30
50
40
80
1600
Figure 9. Power Gain and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) PEAK
19
21
20
100
2000
D
25_C
TC =--30_C
85_C
Gps
40
60
50
20
30
--30_C
25_C
85_C
VDD =30 V
50 V
35 V
40 V
45 V
24
23
22
26
25
70
80
90
Crss
1000
D
Gps
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
2000
1000
IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle


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