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TC--350 Fiches technique(PDF) 22 Page - Freescale Semiconductor, Inc

No de pièce TC--350
Description  RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
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Fabricant  FREESCALE [Freescale Semiconductor, Inc]
Site Internet  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

TC--350 Fiches technique(HTML) 22 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2010
 Initial Release of Data Sheet
1
Jan. 2011
 Fig. 1, Pin Connections, corrected pin 4 label from RFout/VGS to RFin/VGS,p.1
2
May 2012
 Added Application Circuits Typical Performance table, p. 1
 Capable of Handling VSWR bullet: corrected 1250 Peak Output Power value to 1500 and converted to table,
p. 1, 3
 Table 1, Max Ratings: final DC test specification for Drain--Source Voltage changed from +125 to +133 Vdc,
p. 2
 Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD
class, p. 2
 Table 4, Off Characteristics: final DC test specification for Drain--Source Breakdown Voltage minimum value
changed from 125 to 133 Vdc, p. 2
 Table 4, On Characteristics: added Forward Transconductance, p. 2
 Fig. 10, MTTF versus Junction Temperature -- CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 7
 Added Fig. 12, Source and Load Impedances Optimized for IRL, Power and Efficiency — Push--pull, p. 8
 Added Fig. 13, 87.5--108 MHz FM Broadcast Reference Circuit Component Layout, p. 9
 Added Table 9, 87.5--108 MHz FM Broadcast Reference Circuit Component Designations and Values, p. 9
 Added Fig. 14, 87.5--108 MHz FM Broadband Reference Circuit Schematic, p. 10
 Added Fig. 15, Power Gain and Drain Efficiency versus Output Power (87.5--108 MHz), p. 11
 Added Fig. 16, Series Equivalent 87.5--108 MHz FM Broadcast Reference Circuit Source and Load
Impedance, p. 11
 Added Fig. 17, 144--148 MHz Reference Circuit Component Layout, p. 12
 Added Table 9, 144--148 MHz Reference Circuit Component Designations and Values, p. 12
 Added Fig. 18, 144--148 MHz Reference Circuit Schematic, p. 13
 Added Fig. 19, Series Equivalent 144--148 MHz Reference Circuit Source and Load Impedance, p. 14
 Added Fig. 20, Power Gain and Drain Efficiency versus Output Power (144--148 MHz), p. 14
 Added Fig. 21, Intermodulation Distortion Products versus Output Power (144--148 MHz), p. 14
 Added Fig. 22, 144 MHz Harmonics @ 1 kW, p. 15
3
Oct. 2012
 Added part number MRFE6VP61K25GSR5, p. 1
 Added 2282--02 (NI--1230S--4 Gull) package isometric, p. 1, and Mechanical Outline, p. 20, 21
4
Mar. 2013
 MRFE6VP61K25HR6 tape and reel option replaced with MRF6VP61K25HR5 per PCN15551.
 Replaced Case Outline 98ASB16977C, Issue E with Issue F, p. 16, 17. Changed dimension C from
0.150--0.200 to CC 0.170--0.190.
 Replaced Case Outline 98ARB18247C, Issue F with Issue G, p. 18, 19. Changed dimension C from
0.150--0.200 to CC 0.170--0.190. Added minimum Z dimension R0.00.
 Replaced Case Outline 98ASA00459D, Issue O with Issue A, p. 20, 21. Changed dimension C from
0.150--0.200 to CC 0.170--0.190. Corrected positional tolerance for dimension S.


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