BC817-40LT1G datasheet(2/10 Pages) ONSEMI

No de pièce	BC817-40LT1G

Description	General Purpose Transistors NPN Silicon Collector ??Emitter Voltage VCEO 45

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Fabricant	ONSEMI [ON Semiconductor]

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BC846ALT1G Series, SBC846ALT1G Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage BC846A, B, SBC846A, B

(IC = 10 mA)

BC847A, B, C, BC850B, C, SBC847C

BC848A, B, C, BC849B, C, SBC848B

V(BR)CEO

65

45

30

−

V

Collector−Emitter Breakdown Voltage BC846A, B

(IC = 10 mA, VEB = 0)

BC847A, B, C BC850B, C, SBC847C

BC848A, B, C, BC849B, C, SBC848B

V(BR)CES

80

50

30

−

V

Collector−Base Breakdown Voltage BC846A, B, SBC846A, B

(IC = 10 mA)

BC847A, B, C, BC850B, C, SBC847C

BC848A, B, C, BC849B, C, SBC848B

V(BR)CBO

80

50

30

−

V

Emitter−Base Breakdown Voltage

BC846A, B, SBC846A, B

(IE = 1.0 mA)

BC847A, B, C, BC850B, C, SBC847C

BC848A, B, C, BC849B, C, SBC848B

V(BR)EBO

6.0

5.0

−

V

Collector Cutoff Current (VCB = 30 V)

(VCB = 30 V, TA = 150°C)

ICBO

−

15

5.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

BC846A, BC847A, BC848A, SBC846A

(IC = 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B, SBC846B, SBC848B

BC847C, BC848C, SBC847C

(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A, SBC846A, SBC846A

BC846B, BC847B, BC848B,

BC849B, BC850B, SBC846B, SBC848B

BC847C, BC848C, BC849C, BC850C, SBC847C

hFE

−

110

200

420

90

150

270

180

290

520

−

220

450

800

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VCE(sat)

−

0.25

0.6

V

Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VBE(sat)

−

0.7

0.9

−

V

Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

VBE(on)

580

−

660

−

700

770

mV

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

−

MHz

Output Capacitance (VCB = 10 V, f = 1.0 MHz)

Cobo

−

4.5

pF

Noise Figure (IC = 0.2 mA,

VCE = 5.0 Vdc, RS = 2.0 kW,

BC846A,B, BC847A,B,C, BC848A,B,C,

SBC846A, B, SBC847C, SBC848B

f = 1.0 kHz, BW = 200 Hz)

BC849B,C, BC850B,C

NF

−

10

4.0

dB

Numéro de pièce similaire - BC817-40LT1G

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	BC817-40LT1G	58Kb / 4P	General Purpose Transistors(NPN Silicon)? June, 2004 ??Rev. 6
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	BC817-40LT1G	145Kb / 10P	General Purpose Transistors October, 2016 ??Rev. 15

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Fabricant	No de pièce	Fiches technique	Description
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Inchange Semiconductor ...	BU508A-2	534Kb / 3P	Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 900V (Min)
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	BU120	190Kb / 2P	Collector-Emitter Sustaining Voltage-:VCEO(SUS) = 200V(Min)
	2SB1284	188Kb / 2P	Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -100V(Min.)
	2SA1444	121Kb / 2P	Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -60V(Min)
	BUY70A	195Kb / 2P	Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 400V(Min)

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