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KSE200 Datasheet(Fiches technique) 1 Page - Fairchild Semiconductor

Numéro de pièce KSE200
Description  Feature
Télécharger  4 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KSE200 Datasheet(HTML) 1 Page - Fairchild Semiconductor

  KSE200 Datasheet HTML 1Page - Fairchild Semiconductor KSE200 Datenblatt HTML 2Page - Fairchild Semiconductor KSE200 Datenblatt HTML 3Page - Fairchild Semiconductor KSE200 Datenblatt HTML 4Page - Fairchild Semiconductor  
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©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter- Base Voltage
8
V
IC
Collector Current
5
A
PC
Collector Dissipation (TC=25°C)
15
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BVCEO
Collector-Emitter Breakdown Voltage
IC=10mA, IB=0
25
V
ICBO
Collector Cut-off Current
VCB=40V, IE=0
VCB=40V, IE=0 @ TJ=125°C
100
100
nA
µA
IEBO
Emitter Cut-off Current
VBE=8V, IC=0
100
nA
hFE
DC Current Gain
VCE=1V, IC=500mA
VCE=1V, IC=2A
VCE=2V, IC=5A
70
45
10
180
VCE(sat)
Collector-Emitter Saturation Voltage
IC=500mA, IB=50mA
IC=2A, IC=200mA
IC=5A, IB=1A
0.3
0.75
1.8
V
V
V
VBE(sat)
Base- Emitter Saturation Voltage
IC=5A, IB=1A
2.5
V
VBE(on)
Base-Emitter On Voltage
VCE=1V, IC=2A
1.6
V
fT
Current Gain Bandwidth Product
VCE=10V, IC=100mA
65
MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=0.1MHz
80
pF
KSE200
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.)
• Complement to KSE210
1
TO-126
1. Emitter
2.Collector
3.Base


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