2SC4154_10 datasheet(1/4 Pages) ISAHAYA

No de pièce	2SC4154

Description	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

Download	4 Pages

Scroll/Zoom	100%

Fabricant	ISAHAYA [Isahaya Electronics Corporation]

Site Internet	http://www.idc-com.co.jp

Logo

1 / 4 page

〈SMALL-SIGNAL TRANSISTOR〉

2SC4154

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE (Super mini type)

ISAHAYA ELECTRONICS CORPORATION

DESCRIPTION

2SC4154 is a super mini package resin sealed

silicon NPN epitaxial transistor,

It is designed for low frequency voltage application.

Complementary with ISA1602AM1.

.

FEATURE

●Small collector to emitter saturation voltage.

VCE(sat)=0.3V max（@Ic=100mA,IB=10mA）

●Excellent linearity of DC forward gain.

●Super mini package for easy mounting

APPLICATION

For Hybrid IC, small type machine low frequency voltage

Amplify application.

※） It shows hFE classification at right table.

OUTLINE DRAWING

Unit：ｍｍ

MAXIMUM RATINGS（Ta=25℃）

Symbol

Parameter

Ratings

Unit

V

CBO

Collector to Base voltage

50

V

CEO

Collector to Emitter voltage

50

V

EBO

Emitter to Base voltage

6

V

I

O

Collector current

200

mA

P

c

Collector dissipation

200

mW

T

j

Junction temperature

＋150

℃

T

stg

Storage temperature

-55∼＋150

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

C to E break down voltage

V(BR)CEO

I

C=100μA ,R BE=∞

50

-

V

Collector cut off current

ICBO

V

CB=50V, I E=0mA

-

0.1

μA

Emitter cut off current

IEBO

V

EB=6V, I C=0mA

-

0.1

μA

DC forward current gain※

hFE

V

CE=6V, I C=1mA

150

-

500

DC forward current gain

hFE

V

CE=6V, I C=0.1mA

90

-

C to E Saturation Voltage

VCE(sat)

I

C=100mA ,IB=10mA

-

0.3

V

Gain bandwidth product

fT

V

CE=6V, I E=-10mA

-

200

-

MHz

Collector output capacitance

Cob

V

CB=6V, I E=0,f=1MHz

-

2.5

-

pF

Noise figure

NF

V

CE=6V, I E=-0.1mA,f=1kHz,RG=2kΩ

-

15

dB

JEITA：SC-70

JEDEC： -

Item

E

F

hFE Item

150∼300

250∼500

TERMINAL CONNECTER

①：BASE

②：EMITTER

③：COLLECTOR

Type name

hFE Item

L F

MARKING

Numéro de pièce similaire - 2SC4154_10

Fabricant	No de pièce	Fiches technique	Description
Isahaya Electronics Cor...	2SC4154	155Kb / 3P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

More results

Description similaire - 2SC4154_10

Fabricant	No de pièce	Fiches technique	Description
Isahaya Electronics Cor...	2SC5383	184Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	INC6006AS1	151Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC5938A	89Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC5814	195Kb / 5P	For Low Frequency Amplify Application Silicon NPN Epitaxial Type
List of Unclassifed Man...	2SC5214	155Kb / 3P	For Low Frequency Amplify Application Silicon Npn Epitaxial Type
Isahaya Electronics Cor...	2SC3928A	138Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC4155	138Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	INA6002AC1	70Kb / 3P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC3052	189Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC4155A	139Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
List of Unclassifed Man...	2SC4155	93Kb / 3P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

More results

2SC4154 Fiches technique(PDF) 1 Page - Isahaya Electronics Corporation

2SC4154 Fiches technique(HTML) 1 Page - Isahaya Electronics Corporation

Numéro de pièce similaire - 2SC4154_10

Description similaire - 2SC4154_10

Html Pages

1 2 3 4

Fiches technique Télécharger

Lien URL