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BAS19 Fiches technique(PDF) 4 Page - NXP Semiconductors

No de pièce BAS19
Description  General purpose diodes
Download  10 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAS19 Fiches technique(HTML) 4 Page - NXP Semiconductors

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2003 Mar 20
4
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig.3
IF = 100 mA
1
V
IF = 200 mA
1.25
V
IR
reverse current
see Fig.5
BAS19
VR = 100 V
100
nA
VR = 100 V; Tj = 150 °C
100
µA
BAS20
VR = 150 V
100
nA
VR = 150 V; Tj = 150 °C
100
µA
BAS21
VR = 200 V
100
nA
VR = 200 V; Tj = 150 °C
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
5
pF
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured at
IR = 3 mA; see Fig.8
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
330
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W


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