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KA5S0965 Fiches technique(PDF) 6 Page - Fairchild Semiconductor

No de pièce KA5S0965
Description  Fairchild Power Switch(FPS)
Download  20 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KA5S0965 Fiches technique(HTML) 6 Page - Fairchild Semiconductor

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KA5S-SERIES KA5S0765C/KA5S09654QT/KA5S0965/KA5S12656/KA5S1265
6
Electrical Characteristics (SFET Part; Continued)
(Ta = 25
°C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
KA5S0965
Drain-source breakdown voltage
BVDSS
VGS=0V, ID=50
µA
650
-
-
V
Zero gate voltage drain current
IDSS
VDS=Max., Rating, VGS=0V
-
-
50
µA
VDS=0.8Max., Rating,
VGS=0V, TC=125
°C
-
-
200
µA
Static drain-source on resistance(1)
RDS(on)
VGS=10V, ID=4.5A
-
0.96
1.2
Forward transconductance(1)
gfs
VDS=50V, ID=4.5A
5.0
-
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f = 1MHz
-
1750
-
pF
Output capacitance
Coss
-
190
-
Reverse transfer capacitance
Crss
-
78
-
Turn on delay time
td(on)
VDD=0.5BVDSS, ID=9.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-20
50
nS
Rise time
tr
-
23
55
Turn off delay time
td(off)
-
85
180
Fall time
tf
-
30
70
Total gate charge
(gate-source+gate-drain)
Qg
VGS=10V, ID=9.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
-74
95
nC
Gate-source charge
Qgs
-
12
-
Gate-drain (Miller) charge
Qgd
-
35
-
KA5S12656
Drain-source breakdown voltage
BVDSS
VGS=0V, ID=50
µA
650
-
-
V
Zero gate voltage drain current
IDSS
VDS=Max., Rating, VGS=0V
-
-
50
µA
VDS=0.8Max., Rating,
VGS=0V, TC=125
°C
-
-
200
µA
Static drain-source on resistance(1)
RDS(on)
VGS=10V, ID=6.0A
-
0.72
0.9
Forward transconductance(1)
gfs
VDS=50V, ID=4.0A
5.7
-
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f = 1MHz
-
2700
-
pF
Output capacitance
Coss
-
300
-
Reverse transfer capacitance
Crss
-
61
-
Turn on delay time
td(on)
VDD=0.5BVDSS, ID=12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-18
-
nS
Rise time
tr
-
37
-
Turn off delay time
td(off)
-
88
-
Fall time
tf
-
36
-
Total gate charge
(gate-source+gate-drain)
Qg
VGS=10V, ID=12.0A,
VDS=0.5BVDSS(MOSFET
Switching time are
Essentially independent of
Operating temperature)
-
-
140
nC
Gate-source charge
Qgs
-
20
-
Gate-drain (Miller) charge
Qgd
-
69
-


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