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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF9395MTR1PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF9395MTR1PBF Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 12/2/10 IRF9395MPbF IRF9395MTRPbF Typical values (unless otherwise specified) Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. DirectFET ISOMETRIC Description The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. MC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) DirectFET dual P-Channel Power MOSFET l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, no Bromide and no Halogen l Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) SQ SX ST MQ MX MT MP MC S G G S D D SS Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Features and Benefits Applications l Isolation Switch for Input Power or Battery Application Q1-Q2 Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 32nC 15nC 3.2nC 62nC 23nC -1.8V VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Note Form Quantity IRF9395MTRPbF DirectFET Medium Can Tape and Reel 4800 IRF9395MTR1PbF DirectFET Medium Can Tape and Reel 1000 Orderable part number Package Type Standard Pack 2 4 6 8 10 12 14 16 18 20 -VGS, Gate -to -Source Voltage (V) 0 4 8 12 16 20 24 ID = -14A TJ = 25°C TJ = 125°C 020 40 60 80 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= -24V VDS= -15V VDS= -6V ID= -11A PD - 96332A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g Max. -11 -75 -110 ±20 -30 -14 V A |
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